data sheet semiconductor http://www.yeashin.com 1 rev.02 20120305 mb1s thru mb10s mini surface mo unt gl ass passi vated si ngle-phase bridge rectifier voltage 100 to 1000volts 0.8 amperes curre nt fe a t ures ?e plasti c ma terial u s ed car r ies underw r iter s laborato r y recogni tion 94v- o ?e l o w leakage ?e surge ov erload r a ting-- 30 ampere s peak ?e ideal for printed circui t b oard ?e ex ceeds env ironmental standard s o f m i l-s-19 500 ?e high tempera t ure sol dering : 260 o c / 10 se cond s at te r m inals ?e pb free produ ct a t av ailable : 99% s n abov e meet rohs env ironment su bst a nce dire ctiv e reque st m e c h an i c al d a t a ?e ca se : reliab l e lo w cost con s tru c tion util izin g molded pl asti c te chni que r e sults in inex pensiv e product ?e termina l s: lead solderab le p e r m i l- std-202, me thod 2 08. ?e polari ty : polari ty sy mbols molded or marking on body . ?e m o u n ting po si tio n : a n y . ?e w e i ght: 0.008 ou nce, 0 . 22 gram. m a xim u m r a ti ng s a n d electric a l ch a r a c teristi c s ratings a t 2 5 c am bient tempe r atur e u n less o t herw i se sp ecified. sing le ph ase, h a lf w a v e , 60hz, resi stiv e or indu cti v e load. for cap a ci tiv e load, dera t e curr ent by 20% s y m b ols m b1s m b2s m b4s m b 6 s m b 8 s m b 10s uni t m a x i mum repetit i v e peak rev e rse voltage v r r m 1 0 0 2 0 0 4 0 0 6 0 0 8 0 0 1 0 0 0 v max i mum r m s vo ltage v r m s 7 0 1 4 0 2 8 0 4 2 0 5 6 0 7 0 0 v m a x i mum dc blo cking voltage v d c 1 0 0 2 0 0 4 0 0 6 0 0 8 0 0 1 0 0 0 v m a x i mum a verage for w a rd current at t a = 40 j ta =2 5 j (note 3) i a v 0 . 8 a peak for w a rd surge current: 8 .3ms single ha lf sine - w a v e super i mposed on r a ted l o ad (j edec method ) i f s m 3 5 a i2t rat i ng fo r fus i ng (t<8.35m s) i 2 t 3 . 7 3 5 a2s m a x i mum fo r w a rd vo l t age d r op p e r b r i dge e l ement at 0 . 8 a v f 1 . 0 v m a xi mum dc rever s e cur r e nt tj = 25 j at rate dc bl ocking vol t age tj =125 j ir 5.0 500 g a t y pi cal juncti on c a paci tance (note 1) c j 2 5 pf t y pical therm a l re sistance (note2) r c ja r c jl 85 20 j /w oper ati ng temp erature range tj, tstg -55 to +150 j notes: 1. mea s ure d a t 1.0 mhz and applie d re v e rse v o ltage of 4 . 0 vol t s 2. thermal re si sta n c e from jun c tio n to ambient and from j unction to lead mou n ted on p.c.b. w i th 0.5 x 0.5"(1 3 x 13 mm) copp er pa ds 3. * r-l oad on al umina subtrate ta=25 j .157(4.0) .106(2.7) .275(7.0) .008(0.2) .043(1.1) .106(2.7) .193(4.9) .031(0.8) .142(3.6) .090(2.3) max .027(0.7) .090(2.3) .177(4.5) .019(0.5) + ~ ~ di mdi unit:inch(mm)
http://www.yeashin.com 2 rev.02 20120305 mb1s thru mb10s device characteristics reverse characteristics 0 20406080100120140 0.01 0.1 1 10 percent of rated peak reverse voltage (%) reverse current ( a) t = 100 c o c t = 25 c o a m non-repetitive surge current 12 51020 50100 0 5 10 15 20 25 30 35 number of cycles at 60hz peak forward surge current (a) forward characteristics 0.4 0.6 0.8 1 1.2 1.4 0.01 0.1 1 10 forward voltage (v) forward current (a) t = 25 c o a pulse width = 300 m s 2% duty cycle forward current derating curve 0 25 50 75 100 125 150 175 0 0.25 0.5 0.75 1 ambient temperature ( c) forward current (a) o pad layout x c y z z 7.5 x 1.2 y 1.6 c 2.7 dimensions mdi(mm)
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